Publication
Spectroscopic and theoretical investigations of hydrogen-induced exfoliation of silicon : Si-H bending modes
Y. Caudano (1, 2), M.K. Weldon (1), Y.J. Chabal (1), B.B. Stefanov (1), K. Raghavachari (1), D.C. Jacobson (1),
S.B. Christman (1) and E.E. Chaban (1)
Proc. Fourth Int. Symp. On Semiconductor Wafer Bonding : Science, Technology and Applications, vol 97-36
(Electrochemical Society, Pennington, NJ, 1998) p. 365
Abstract
Infrared absorption spectroscopy is used to study the exfoliation process in hydrogen-implanted silicon wafers by monitoring the bound hydrogen evolution. The ability to probe the low frequency vibrations, such as the bending modes of the Si-H bond, along with first-principles calculations using gradient-corrected density functional theory, makes it possible to unambiguously determine the presence of relevant defect structures such as the hydrogenated mono-vacancies VH, VH2, VH3 and VH4 and the development of internal surfaces. The formation of molecular hydrogen upon annealing is better established by using the evolution of the intensity of both the bending and the stretching modes.
Author addresses
- Bell Laboratories - Lucent Technologies
600 Mountain Avenue, Murray Hill, NJ 07974, USA - Laboratoire de Spectroscopie Moléculaire de Surface (LASMOS)
Institute for Studies in Interface Science (ISIS)
Facultés Universitaires Notre-Dame de la Paix (FUNDP)
61 Rue de Bruxelles, B-5000 Namur, Belgium
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